Current - Continuous Drain (Id) @ 25°C:
FET Type:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Package / Case:
Power - Max:
Rds On (Max) @ Id, Vgs:
Supplier Device Package:
Vgs(th) (Max) @ Id:
5,621 Records
Image Part Manufacturer Description MOQ Stock Action
EPC2110 EPC
GANFET 2NCH 120V 3.4A DIE
1
15,015
In-stock
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EPC2104 EPC
GAN TRANS SYMMETRICAL HALF BRIDG
1
1,512
In-stock
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BSM300D12P2E001 ROHM Semiconductor
MOSFET 2N-CH 1200V 300A
1
77
In-stock
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SSM6N37FU,LF Toshiba Electronic Devices and Storage Corporation
MOSFET 2 N-CHANNEL 20V 250MA US6
1
57,313
In-stock
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DMC2700UDM-7 Diodes Incorporated
MOSFET N/P-CH 20V SOT26
1
864,431
In-stock
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SSM6L36FE,LM Toshiba Electronic Devices and Storage Corporation
MOSFET N/P-CH 20V 0.5A/0.33A ES6
1
122,909
In-stock
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UM6K33NTN ROHM Semiconductor
MOSFET 2N-CH 50V 0.2A UMT6
1
497,272
In-stock
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UM6K34NTCN ROHM Semiconductor
MOSFET 2N-CH 50V 0.2A UMT6
1
258,837
In-stock
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NTJD4001NT1G onsemi
MOSFET 2N-CH 30V 0.25A SOT-363
1
16,277
In-stock
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2N7002DWH6327XTSA1 Infineon Technologies
MOSFET 2N-CH 60V 0.3A SOT363
1
65,702
In-stock
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NTZD3155CT1G onsemi
MOSFET N/P-CH 20V SOT-563
1
46,614
In-stock
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DMP3085LSD-13 Diodes Incorporated
MOSFET 2P-CH 30V 3.9A 8SO
1
203,575
In-stock
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BSD840NH6327XTSA1 Infineon Technologies
MOSFET 2N-CH 20V 0.88A SOT363
1
135,079
In-stock
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DMN2004VK-7 Diodes Incorporated
MOSFET 2N-CH 20V 0.54A SOT-563
1
22,738
In-stock
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SSM6N58NU,LF Toshiba Electronic Devices and Storage Corporation
MOSFET 2N-CH 30V 4A UDFN6
1
17,690
In-stock
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DMC31D5UDJ-7 Diodes Incorporated
MOSFET N/P-CH 30V SOT963
1
131,287
In-stock
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DMP2004VK-7 Diodes Incorporated
MOSFET 2P-CH 20V 0.53A SOT-563
1
85,846
In-stock
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SSM6N57NU,LF Toshiba Electronic Devices and Storage Corporation
MOSFET 2N-CH 30V 4A UDFN6
1
112,260
In-stock
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DMN2004DMK-7 Diodes Incorporated
MOSFET 2N-CH 20V 0.54A SOT-26
1
237,199
In-stock
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AO4629 Alpha and Omega Semiconductor, Inc.
MOSFET N/P-CH 30V 6A/5.5A 8SOIC
1
248,587
In-stock
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1 / 282 Page, 5621 Records